Spintronics: toward in-memory computing
2019 Memory devices and applications for in-memory computing Abu Sebastian
febr 2021 HiPEAC21 - Keynote by Evangelos Eleftheriou: "In-memory Computing for AI Applications"
2014 K.Ando Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)
We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers.
2015 wong Memory leads the way to better computing
H.-S. Philip Wong and Sayeef Salahuddin
New non-volatile memory devices store information using different physical mechanisms from those
employed in today’s memories and could achieve substantial improvements in computing performance
and energy efficiency
2015 kent A new spin on magnetic memories
Andrew D. Kent and Daniel C. Worledge
Solid-state memory devices with all-electrical read and write operations might lead to faster, cheaper
information storage
201x Computing-in-Memory with Spintronics Shubham Jain, et al, Kaushik Roy
3 ARCHITECTURES
++++ An MRAM-based Deep In-Memory Architecture for Deep Neural Networks Ameya D. Patil
We further quantify accuracy drop due to analog computation and MTJ process variations for LeNet-300-100 on MNIST dataset and a 9-layer
CNN on CIFAR-10 dataset and find it to be within $0.5%$ and $1%$, respectively.
2020 Spintronic devices for energy-efficient data storage and energy harvesting Jorge Puebla
Tom Coughlin
- 2016!!! not realized? Crossing the Chasm to New Solid-State Storage Architectures
This article explores the current state of solid-state memory, including what is publicly known about the Intel/Micron XPoint memory and the future consumer devices and technologies that nonvolatile memory will make possible.
STT-RAM or other spin-based MRAM technologies could be very attractive nonvolatile candidates to replace SRAM, and possibly DRAM, because of their high read and write performance as well as high endurance. The spin-based MRAM devices are also generally configured with a crossbar memory architecture with word- and bit-line memory-cell selection.
2019 EMERGING MEMORIES RAMP UP
https://tomcoughlin.com/wp-content/uploads/2019/06/